Hybrid bonding contact structure of three-dimensional memory device

ABSTRACT

Embodiments of through array contact structures of a 3D memory device and fabricating method thereof are disclosed. The memory device includes an alternating layer stack disposed on a first substrate. The alternating layer stack includes a first region including an alternating dielectric stack, and a second region including an alternating conductor/dielectric stack. The memory device further comprises a barrier structure including two parallel barrier walls extending vertically through the alternating layer stack and laterally along a word line direction to laterally separate the first region from the second region. The memory device further comprises a plurality of through array contacts in the first region, each through array contact extending vertically through the alternating dielectric stack.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation application of U.S. patentapplication Ser. No. 17/148,209, filed on Jan. 13, 2021, which is acontinuation application of U.S. patent application Ser. No. 16/821,757,filed on Mar. 17, 2020 (now U.S. Pat. No. 10,923,491), which is acontinuation application of U.S. patent application Ser. No. 16/046,852,filed on Jul. 26, 2018 (now U.S. Pat. No. 10,593,690), which is acontinuation application of and claims priority to International PatentApplication No. PCT/CN2018/077908, filed on Mar. 2, 2018, which claimspriority to Chinese Patent Application No. 201710135655.3 filed on Mar.8, 2017, the entire contents of which are incorporated herein byreference.

BACKGROUND

Embodiments of the present disclosure relate to three-dimensional (3D)memory devices and fabrication methods thereof.

Planar memory cells are scaled to smaller sizes by improving processtechnology, circuit design, programming algorithm, and fabricationprocess. However, as feature sizes of the memory cells approach a lowerlimit, planar process and fabrication techniques become challenging andcostly. As a result, memory density for planar memory cells approachesan upper limit.

A 3D memory architecture can address the density limitation in planarmemory cells. The 3D memory architecture includes a memory array andperipheral devices for controlling signals to and from the memory array.

BRIEF SUMMARY

Embodiments of through array contact (TAC) structures of 3D memorydevices and fabrication methods thereof are disclosed herein.

Disclosed is a three-dimensional (3D) NAND memory device including analternating layer stack disposed on a first substrate. The alternatinglayer stack includes a first region including an alternating dielectricstack comprising a plurality of dielectric layer pairs, and a secondregion including an alternating conductor/dielectric stack comprising aplurality of conductor/dielectric layer pairs. The 3D NAND memory devicefurther includes a barrier structure extending vertically through thealternating layer stack to laterally separate the first region from thesecond region, a plurality of through array contacts in the firstregion, each through array contact extending vertically through thealternating dielectric stack, an array interconnection layer in contactwith the plurality of through array contacts, a peripheral circuitformed on a second substrate. and a peripheral interconnection layer onthe peripheral circuit. The array interconnection layer is bonded on theperipheral interconnection layer, such that the peripheral circuit iselectrically connected with at least one of the plurality of througharray contacts.

In some embodiments, the array interconnection layer is disposed on thealternating layer stack at an end of the alternating layer stackopposite to the first substrate. In some other embodiments, the arrayinterconnection layer is disposed on a surface of the first substratethat is opposite to the alternating layer stack.

The array interconnection layer includes at least one firstinterconnection structure embedded in a first dielectric layer. Theperipheral interconnection layer includes at least one secondinterconnection structure embedded in a second dielectric layer. Theperipheral circuit is electrically connected with the at least one ofthe plurality of through array contacts via the at least one firstinterconnection structure and the at least one second interconnectionstructure.

The barrier structure comprises silicon oxide and silicon nitride. Eachof the plurality of dielectric layer pairs comprises a silicon oxidelayer and a silicon nitride layer, and each of the plurality ofconductor/dielectric layer pairs comprises a metal layer and a siliconoxide layer. A number of the plurality of dielectric layer pairs is atleast 32, and a number of the plurality of conductor/dielectric layerpairs is at least 32.

The 3D NAND memory device further includes a plurality of slitstructures each extending vertically through the alternatingconductor/dielectric stack and laterally along a word line direction todivide the alternating conductor/dielectric stack into a plurality ofmemory fingers.

In some embodiments, the barrier structure laterally extends along theword line direction. The first region is separated by the barrierstructure from the second region and sandwiched between two neighboringslit structures.

In some embodiments, the barrier structure laterally extends along a bitline direction that is different than the word line direction tolaterally separate the first region from the second region. The bit linedirection can be perpendicular to the word line direction.

In some embodiments, a width of the first region enclosed by the barrierstructure in the bit line direction is larger than a distance betweentwo neighboring slit structures.

In some embodiments, the first region enclosed by the barrier structureis sandwiched between two top selective gate staircase regions in theword line direction. At least top two layers of the alternatingconductor/dielectric stack that is away from the first substrate in eachtop selective gate staircase region have a staircase structure. At leastone conductive layer on the staircase structure in the top selectivegate staircase regions and configured to interconnect top select gatesthat are above the alternating conductor/dielectric stack in the secondregion and on both sides of first region enclosed by the barrierstructure in the word line direction. At least two first regionsenclosed by corresponding barrier structures, each first regionextending parallel along the bit line direction.

The 3D NAND memory device further includes a plurality of barrierstructures to enclose a plurality of first regions from the secondregion, such that the plurality of first regions are aligned in the bitline direction. Each of the plurality of first regions is sandwichedbetween two neighboring slit structures in the bit line direction. Theplurality of first regions are aligned so as to form at least twocolumns in the bit line direction.

In some embodiments, at least one silt structure, that is sandwiched bytwo neighboring barrier structures in the bit line direction, includes agap and the at least one silt structure is configured to interconnectword lines of neighboring ones of the plurality of memory fingers.

In some embodiments, the first region is separated by the barrierstructure from a staircase structure on an edge of the alternatingconductor/dielectric layer stack along the bit line direction. Anopening of the barrier structure is at an edge of the alternating layerstack along the bit line direction. A width of the first region in thebit line direction is larger than a distance between two neighboringslit structures. Alternatively, a width of the first region in the bitline direction is less than a maximum distance between two neighboringslit structures in the staircase structure on the edge of thealternating layer stack along the bit line direction.

The 3D NAND memory device further includes a plurality of dummy channelstructures adjacent to the barrier structure, each dummy channelstructure extending vertically through the alternatingconductor/dielectric stack.

Another aspect of the present disclosure provides a method for forming athree-dimensional (3D) NAND memory device, comprising: forming, on afirst substrate, an alternating dielectric stack comprising a pluralityof dielectric layer pairs, each of the plurality of dielectric layerpairs comprising a first dielectric layer and a second dielectric layerdifferent from the first dielectric layer; forming at least one barrierstructure each extending vertically through the alternating dielectricstack. The at least one barrier structure separates the alternatingdielectric stack into at least one first region enclosed laterally by atleast the barrier structure, and a second region. The method furtherincludes forming a plurality of slits, and replacing, through the slits,first dielectric layers in the second portion of the alternatingdielectric stack with conductor layers to form an alternatingconductor/dielectric stack comprising a plurality ofconductor/dielectric layer pairs; depositing a conductive material intothe slits to form a plurality of slit structures; forming a plurality ofthrough array contacts in the first region, each through array contactextending vertically through the alternating dielectric stack; formingan array interconnection layer in contact with the plurality of througharray contacts; and bonding the array interconnection layer to aperipheral interconnection layer on a second substrate, such that atleast one of the plurality of through array contacts is electricallyconnected with a peripheral circuit on the second substrate.

In some embodiments, forming the array interconnection layer comprisesforming at least one first interconnection structure in a firstdielectric layer that is located on the alternating layer stack at anend of the alternating layer stack opposite to the first substrate. Insome other embodiments, forming the array interconnection layercomprises forming at least one first interconnection structure in afirst dielectric layer that is located on a surface of the firstsubstrate that is opposite to the alternating layer stack.

The method further includes: prior to bonding the array interconnectionlayer to the peripheral interconnection layer, forming the peripheralcircuit on the second substrate; forming the peripheral interconnectionlayer on the peripheral circuit, such that at least one secondinterconnect structure in the peripheral interconnection layer iselectrically connected to the peripheral circuit; and disposing thearray interconnection layer and the peripheral interconnection layer,such that the at least one first interconnection structure correspondsto the at least one second interconnection structure respectively.

The method further includes, prior to forming the slits, forming aplurality of doped regions in the first substrate, so as to contact eachslit structure with a corresponding doped region.

The method further includes forming the plurality of slit structureslaterally to extend along a word line direction to divide thealternating conductor/dielectric stack into a plurality of memoryfingers.

The method further includes forming two parallel barrier structureslaterally to extend along the word line direction, such that the firstregion is separated by the two parallel barrier structure from thesecond region and sandwiched between two neighboring slit structures.

The method further includes forming the barrier structure laterallyextending along a bit line direction that is different than the wordline direction to laterally separate the first region from the secondregion.

The method further includes forming the barrier structure to laterallyextend along the bit line direction that is perpendicular to the wordline direction.

The method further includes forming the barrier structure such that awidth in the bit line direction of the first region enclosed by thebarrier structure is larger than a distance between two neighboring slitstructures.

The method further includes forming a staircase structure in thealternating dielectric stack adjacent to the barrier structure.

The method further includes forming at least one conductive layer on thestaircase structure adjacent to the barrier structure to interconnecttop select gates that are above the alternating conductor/dielectricstack in the second region, and on both sides of first region enclosedby the barrier structure in the word line direction.

The method further includes forming at least two barrier structures toenclose at least two first regions extending parallel along the bit linedirection.

The method further includes forming a plurality of barrier structures toenclose a plurality of first regions from the second region, theplurality of first regions are aligned in the bit line direction, suchthat each of the plurality of first regions is sandwiched between twoneighboring slit structures in the bit line direction.

The method further includes forming the plurality of barrier structuressuch that the plurality of first regions enclosed by the plurality ofbarrier structures are aligned as at least two columns in the bit linedirection.

The method further includes forming a gap in the at least one siltstructure that is sandwiched by two neighboring barrier structures inthe bit line direction to for interconnect word lines of neighboringmemory fingers.

The method further includes forming the barrier structure to separatethe first region in the staircase structure at the edge of thealternating stack. An opening of the barrier structure is at the edge ofthe alternating layer stack along a bit line direction that is differentthan the word line direction.

The method further includes forming the barrier structure, such that awidth of the first region in the bit line direction is larger than adistance between two neighboring slit structures.

The method further includes forming the barrier structure, such that awidth of the first region in the bit line direction is less than amaximum distance between two neighboring slit structures in thestaircase structure.

The method further includes forming a plurality of dummy channelstructures adjacent to the barrier structure, each dummy channelstructure extending vertically through the alternatingconductor/dielectric stack.

Other aspects of the present disclosure can be understood by thoseskilled in the art in light of the description, the claims, and thedrawings of the present disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate embodiments of the present disclosureand, together with the description, further serve to explain theprinciples of the present disclosure and to enable a person skilled inthe pertinent art to make and use the present disclosure.

FIG. 1 illustrates a schematic diagram of an exemplary 3D memory devicein a plan view, according to some embodiments of the present disclosure.

FIG. 2 illustrates a schematic enlarged plan view of a region of 3Dmemory device including an exemplary bit line through array contactregion, according to some embodiments of the present disclosure.

FIGS. 3A-3D illustrate schematic enlarged plan views of a region of 3Dmemory device including various exemplary word line through arraycontact regions, according to some embodiments of the presentdisclosure.

FIGS. 4A-4B illustrate schematic enlarged plan views of a region of 3Dmemory device including various exemplary staircase structure througharray contact regions, according to some embodiments of the presentdisclosure.

FIGS. 5A-5B illustrate schematic cross-sectional views of an exemplary3D memory device at certain fabricating stages according to someembodiments of the present disclosure.

FIGS. 6A-6B are flowcharts of an exemplary method for forming a 3Dmemory device, according to some embodiments of the present disclosure.

FIGS. 7A-7C illustrate schematic cross-sectional views of an exemplary3D memory device at certain fabricating stages of the method shown inFIGS. 6A-6B according to some embodiments of the present disclosure.

Embodiments of the present disclosure will be described with referenceto the accompanying drawings.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, itshould be understood that this is done for illustrative purposes only. Aperson skilled in the pertinent art will recognize that otherconfigurations and arrangements can be used without departing from thespirit and scope of the present disclosure. It will be apparent to aperson skilled in the pertinent art that the present disclosure can alsobe employed in a variety of other applications.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “some embodiments,” etc.,indicate that the embodiment described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiment. Further,when a particular feature, structure or characteristic is described inconnection with an embodiment, it would be within the knowledge of aperson skilled in the pertinent art to effect such feature, structure orcharacteristic in connection with other embodiments whether or notexplicitly described.

In general, terminology may be understood at least in part from usage incontext. For example, the term “one or more” as used herein, dependingat least in part upon context, may be used to describe any feature,structure, or characteristic in a singular sense or may be used todescribe combinations of features, structures or characteristics in aplural sense. Similarly, terms, such as “a,” “an,” or “the,” again, maybe understood to convey a singular usage or to convey a plural usage,depending at least in part upon context.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something but alsoincludes the meaning of “on” something with an intermediate feature or alayer therebetween, and that “above” or “over” not only means themeaning of “above” or “over” something but can also include the meaningit is “above” or “over” something with no intermediate feature or layertherebetween (i.e., directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the term “substrate” refers to a material onto whichsubsequent material layers are added. The substrate itself can bepatterned. Materials added on top of the substrate can be patterned orcan remain unpatterned. Furthermore, the substrate can include a widearray of semiconductor materials, such as silicon, germanium, galliumarsenide, indium phosphide, etc. Alternatively, the substrate can bemade from an electrically non-conductive material, such as a glass, aplastic, or a sapphire wafer.

As used herein, the term “layer” refers to a material portion includinga region with a thickness. A layer can extend over the entirety of anunderlying or overlying structure, or may have an extent less than theextent of an underlying or overlying structure. Further, a layer can bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer can be located between any pair of horizontal planesbetween, or at, a top surface and a bottom surface of the continuousstructure. A layer can extend horizontally, vertically, and/or along atapered surface. A substrate can be a layer, can include one or morelayers therein, and/or can have one or more layer thereupon, thereabove,and/or therebelow. A layer can include multiple layers. For example, aninterconnection layer can include one or more conductor and contactlayers (in which contacts, interconnect lines, and/or vias are formed)and one or more dielectric layers.

As used herein, the term “nominal/nominally” refers to a desired, ortarget, value of a characteristic or parameter for a component or aprocess operation, set during the design phase of a product or aprocess, together with a range of values above and/or below the desiredvalue. The range of values can be due to slight variations inmanufacturing processes or tolerances. As used herein, the term “about”indicates the value of a given quantity that can vary based on aparticular technology node associated with the subject semiconductordevice. Based on the particular technology node, the term “about” canindicate a value of a given quantity that varies within, for example,10-30% of the value (e.g., ±10%, ±20%, or ±30% of the value).

As used herein, the term “3D memory device” refers to a semiconductordevice with vertically-oriented strings of memory cell transistors(i.e., region herein as “memory strings,” such as NAND strings) on alaterally-oriented substrate so that the memory strings extend in thevertical direction with respect to the substrate. As used herein, theterm “vertical/vertically” means nominally perpendicular to a lateralsurface of a substrate.

Various embodiments in accordance with the present disclosure provide a3D memory device with through array contact (TAC) structures for amemory array (also referred to herein as an “array device”). The TACstructures allow contacts between the memory and various peripheralcircuits and/or peripheral devices (e.g., page buffers, latches,decoders, etc.) to be fabricated in a limited number of steps (e.g., ina single step or in two steps), thereby reducing the process complexityand manufacturing cost. The disclosed TACs are formed through a stack ofalternating dielectric layers, which can be more easily etched to formthrough holes therein compared with a stack of alternating conductor anddielectric layers.

The TACs can provide vertical interconnects between the stacked arraydevice and peripheral device (e.g., for power bus and metal routing),thereby reducing metal levels and shrinking die size. In someembodiments, the TACs can be interconnected with various lines in a topconductive layer and/or a bottom conductive layer, which are suitablefor those 3D memory architectures in which the array device and theperipheral device formed on different substrates are formed sequentiallyor joined by hybrid bonding in a face-to-face manner. In someembodiments, the TACs in the through array contact structures disclosedherein are formed through a stack of alternating dielectric layers,which can be more easily etched to form through holes therein comparedwith a stack of alternating conductor and dielectric layers, therebyreducing the process complexity and manufacturing cost.

FIG. 1 illustrates a schematic diagram of an exemplary 3D memory device100 in the plan view, according to some embodiments of the presentdisclosure. 3D memory device 100 can include a plurality of channelstructure regions (e.g., memory planes, memory blocks, memory fingers,etc., which are described in detail in connection with various figuresbelow), while one or more TAC structures can be formed between twoneighboring channel structure regions (e.g., two channel structureregions next to each other).

As shown in FIG. 1 , 3D memory device 100 can include four or morememory planes 110, each of which can include a plurality of memoryblocks 115. It is noted that, the arrangement of memory planes 110 in 3Dmemory device 100 and the arrangement of memory blocks 115 in eachmemory plane 100 illustrated in FIG. 1 are only used as an example,which is not limit the scope of the present disclosure.

TAC structures can include one or more bit line (BL) TAC regions 160that are sandwiched by two neighboring memory blocks 115 in the bit linedirection of the 3D memory device (labeled as “BL” in figures) andextended along the word line direction of the 3D memory device (labeledas “WL” in figures), one or more word line (BL) TAC regions 160 that aresandwiched by two neighboring memory blocks 115 in the word linedirection (WL) and extended along the bit line direction (BL), and oneor more staircase structure (SS) TAC regions 180 that are located at theedges of each memory plane 110.

In some embodiments, 3D memory device 100 can include a plurality ofcontact pads 120 arranged in a line at an edge of the 3D memory device100. Interconnect contact can be used for electrically interconnect 3Dmemory device 100 to any suitable device and/or interface that providedriving power, receive control signal, transmit response signal, etc.

FIG. 2 depicts an enlarged plan view of a region 130 shown in FIG. 1including an exemplary bit line (BL) TAC region 160 of the 3D memorydevice. FIGS. 3A-3D depict enlarged plan views of a region 140 shown inFIG. 1 including various exemplary word line (WL) TAC regions 170 of the3D memory device. FIGS. 4A and 4B depict enlarged plan views of theregion 150 shown in FIG. 1 including various exemplary staircasestructure (SS) TAC regions 180 of the 3D memory device.

Referring to FIG. 2 , an enlarged plan view of the region 130 shown inFIG. 1 including an exemplary bit line (BL) TAC region of the 3D memorydevice is illustrated according to some embodiments of the presentdisclosure. The region 200 of the 3D memory device (i.e., region 130 asshown in FIG. 1 ) can include two channel structure regions 210 (e.g.,neighboring memory blocks 115 in BL direction) and a bit line (BL) TACregion 233 (e.g., BL TAC region 160 as shown in FIG. 1 ).

Channel structure regions 210 can include an array of channel structures212, each is part of a NAND string including a plurality of stackedmemory cells. Channel structures 212 extend through a plurality ofconductive layer and dielectric layer pairs that are arranged along adirection that is perpendicular to the plan view, which is also referredas a direction that is perpendicular to the surface of the substrate ofthe 3D memory device, and/or a “vertical direction” (which isillustrated in a cross-sectional view in connection with FIG. 5described in detail below).

The plurality of conductor/dielectric layer pairs are also referred toherein as an “alternating conductor/dielectric stack.” The number of theconductor/dielectric layer pairs in alternating conductor/dielectricstack (e.g., 32, 64, or 96) can set the number of memory cells in 3Dmemory device 100. Conductive layers and dielectric layers inalternating conductor/dielectric stack alternate in the verticaldirection. In other words, except the ones at the top or bottom ofalternating conductor/dielectric stack, each conductive layer can beadjoined by two dielectric layers on both sides, and each dielectriclayer can be adjoined by two conductive layers on both sides.

Conductive layers can include conductive materials including, but notlimited to, tungsten (W), cobalt (Co), copper (Cu), aluminum (Al),polycrystalline silicon (polysilicon), doped silicon, silicides, or anycombination thereof. Dielectric layers can include dielectric materialsincluding, but not limited to, silicon oxide, silicon nitride, siliconoxynitride, or any combination thereof. In some embodiments, conductivelayers include metal layers, such as W, and dielectric layers includesilicon oxide.

In some embodiments, BL TAC region 233 can be sandwiched by twoneighboring channel structure regions 210 in BL direction, and canextend in WL direction. TAC region 233 can be defined by a barrierstructure 224 in conjunction with the edges of BL TAC region 233 of the3D memory device. Multiple TACs 226 can be formed in BL TAC region 233,which is enclosed laterally by barrier structure 224 and the edges of BLTAC region 233. In some embodiments, multiple TACs 226 in BL TAC region233 can penetrate an alternating dielectric stack for switch routing andfor reducing bit line capacitance.

The alternating dielectric stack can include a plurality of dielectriclayer pairs that are arranged along the vertical direction that isperpendicular to the surface of the substrate of the 3D memory device(which is illustrated in a cross-sectional view in connection with FIG.5 described in detail below). Each dielectric layer pair includes afirst dielectric layer and a second dielectric layer that is differentfrom first dielectric layer. In some embodiments, first dielectric layerand second dielectric layer each includes silicon nitride and siliconoxide. First dielectric layers in alternating dielectric stack can bethe same as dielectric layers in the alternating conductor/dielectricstack described above. In some embodiments, the number of dielectriclayer pairs in the alternating dielectric stack is the same as thenumber of the conductor/dielectric layer pairs in the alternatingconductor/dielectric stack.

As shown in FIG. 2 , each channel structure region 210 can include oneor more slit structures 214 each extending in WL direction. At leastsome slit structures 214 can function as the common source contact foran array of channel structures 212 in channel structure regions 210.Slit structures 214 can also divide the 3D memory device into multiplememory fingers 242 and/or dummy memory fingers 246. A top select gatecut 255 can be disposed in the middle of each memory finger 242 todivide the top select gate (TSG) of the memory finger into two portions.The top select gate cut 255 can include dielectric materials including,but not limited to, silicon oxide, silicon nitride, silicon oxynitride,or any combination thereof.

In some embodiments, dummy channel structures 222 are formed in part ofchannel structure regions 210, for example, in dummy memory fingers 246that are adjacent to BL TAC region 233 in BL direction. Dummy channelstructures 222 can provide mechanical support for the memory arraystructures. Dummy memory fingers 246 do not have memory functions, andthus bit lines and related interconnect lines are not formed in dummymemory fingers 246.

Referring to FIG. 3A, an enlarged plan view of the region 140 shown inFIG. 1 including an exemplary word line (WL) TAC region of the 3D memorydevice is illustrated according to some embodiments of the presentdisclosure. The region 300A of the 3D memory device (i.e., region 140 asshown in FIG. 1 ) can include channel structure regions 320, a word line(WL) TAC region 372 (e.g., WL TAC region 170 as shown in FIG. 1 ), andtop selective gate (TSG) staircase regions 330.

As shown in FIG. 3A, channel structure regions 320 can include an arrayof channel structures 312, each including a plurality of stacked memorycells. TSG staircase regions 330 can be disposed on the sides of channelstructure regions 320 and adjacent to WL TAC region 372 in the planview. That is, WL TAC region 372 is sandwiched by two TSG staircaseregions 330 in WL direction. WL TAC region 372 can be defined by abarrier structure 324. Multiple TACs 326 used for switch routing and forreducing word line capacitance can be formed in WL TAC region 372, whichis enclosed laterally by barrier structure 324.

In some embodiments, dummy channel structures 322 are formed outside WLTAC region 372 to provide mechanical support for the memory arraystructures. It is understood that dummy channel structures 322 can beformed in any regions outside WL TAC region 372, for example, in TSGstaircase regions 330, and along the edges of channel structure regions320 adjacent to TSG staircase regions 330. It is noted that, channelstructures 312 and dummy channel structures 322 penetrate thealternating conductor/dielectric stack, while TACs 326 penetrate thealternating dielectric stack.

In some embodiments, a plurality of slit structures 314 each extendingin WL direction can divide the 3D memory device into multiple memoryfingers 342, 344. At least some slit structures 314 can function as thecommon source contact for an array of channel structures 312 in channelstructure regions 320. Sidewalls of slit structures 314 can includedielectric materials including, but not limited to, silicon oxide,silicon nitride, silicon oxynitride, or any combination thereof. Fillingmaterial of slit structures 314 can include conductive materialsincluding, but not limited to, tungsten (W), cobalt (Co), copper (Cu),aluminum (Al), polycrystalline silicon (polysilicon), doped silicon,silicides, or any combination thereof.

A top select gate cut 355 can be disposed in the middle of each memoryfinger 342, 344 to divide the top select gate (TSG) of the memory fingerinto two portions. The top select gate cut 355 can include dielectricmaterials including, but not limited to, silicon oxide, silicon nitride,silicon oxynitride, or any combination thereof.

It is noted that, a width of WL TAC region 372 in BL direction can belarger than a width of each memory finger 342 or 344. That is, barrierstructure 324 in BL direction can cross at least two neighboring slitstructures 314. As such, the conductive layers in channel structureregions 320 in memory finger 344 can be completely blocked by barrierstructure 324. Therefore, the top selective gates of channel structures312 between two channel structure regions 320 in memory finger 344 onboth side of WL TAC region 372 are not interconnected by the topconductive layers in the alternating conductor/dielectric stack.

To interconnect the top selective gates of channel structures 312between two channel structure regions 320 in memory finger 344 on bothside of WL TAC region 372, TSG staircase regions 330 can include one ormore conductive lines (not shown in FIG. 3A) formed on a staircasestructure (e.g., within top two to four levels) for making electricalinterconnections with the top selective gates of channel structures 312between two channel structure regions 320 in memory finger 344 that areseparated by WL TAC region 372.

For example, slit structures 314 that are cut off by WL TAC region 372can extend into TSG staircase regions 330. The top two conductive layersin the alternating conductor/dielectric stack can have a single-sidestaircase structure. One or more interconnection layers with contactscan be formed on the single-side staircase structure to provideelectrical interconnection between the top selective gates of channelstructures 312 in channel structure regions 320 and in memory finger 344that are separated by WL TAC region 372.

Accordingly, by introducing TSG staircase regions 330 that interconnectthe top selective gates on both sides of WL TAC region 372, WL TACregion 372 can extend along BL direction to provide an enough size toenclose a desired number of TACS 326. Further, each memory plane 110 asshown in FIG. 1 can include multiple WL TAC regions 372 arranged in WLdirection. That is, multiple memory blocks 115 can be arranged in WLdirection in each memory plane 110.

Referring to FIG. 3B, an enlarged plan view of the region 140 shown inFIG. 1 including another exemplary word line (WL) TAC region of the 3Dmemory device is illustrated according to some alternative embodimentsof the present disclosure. The region 300B of the 3D memory device(i.e., region 140 as shown in FIG. 1 ) can include channel structureregions 320, a dummy channel region 350 that encloses a word line (WL)TAC region 372 (e.g., WL TAC region 170 as shown in FIG. 1 ).

As shown in FIG. 3B, channel structure regions 320 can include an arrayof channel structures 312, each including a plurality of stacked memorycells. Dummy channel region 350 is sandwiched by two channel structureregions 320 in WL direction. WL TAC region 372 is enclosed by dummychannel region 350. WL TAC region 372 can be defined by a barrierstructure 324. Multiple TACs 326 can be formed in WL TAC region 372,which is enclosed laterally by barrier structure 324.

In some embodiments, dummy channel structures 322 are formed outside WLTAC region 372 to provide mechanical support for the memory arraystructures. It is understood that dummy channel structures 322 can beformed in any regions outside WL TAC region 372, for example, in dummychannel region 350, and along the edges of channel structure regions 320adjacent to dummy channel region 350. It is noted that, channelstructures 312 and dummy channel structures 322 penetrate thealternating conductor/dielectric stack, while TACs 326 penetrate thealternating dielectric stack.

In some embodiments, a plurality of slit structures 314 each extendingin WL direction can divide the 3D memory device into multiple memoryfingers 342, 344. A top select gate cut 355 can be disposed in themiddle of each memory finger 342, 344 to divide the top select gate(TSG) of the memory finger into two portions.

It is noted that, a width of WL TAC region 372 in BL direction can belarger than a width of each memory finger 342 or 344. That is, barrierstructure 324 in BL direction can cross at least two neighboring slitstructures 314. As such, the conductive layers in channel structureregions 320 in memory finger 344 can be completely blocked by barrierstructure 324. Therefore, the top selective gates of channel structures312 between two channel structure regions 320 in memory finger 344 onboth side of WL TAC region 372 are not interconnected by the topconductive layers in the alternating conductor/dielectric stack.

Because of that, in some embodiments associated with such design of WLTAC region 372, one memory plane 110 can include only two memory blocks115 in WL direction. WL TAC region 372 is sandwiched by the two memoryblocks (i.e., channel structure regions 320 as shown in FIG. 3B), whilethe outer sides of channel structure regions 320 in WL direction canhave a staircase structure (not shown in FIG. 3B). Thus, the topselective gates of channel structures 312 between two channel structureregions 320 in memory finger 344 on both side of WL TAC region 372 canbe interconnected by using the staircase structure on the edges of thememory plane 110 of the 3D NAND device. Such deign can be suitable forzigzag word line decoder (X-DEC) routing.

Referring to FIG. 3C, an enlarged plan view of the region 140 shown inFIG. 1 including other exemplary word line (WL) TAC regions of the 3Dmemory device is illustrated according to some alternative embodimentsof the present disclosure. The region 300C of the 3D memory device(i.e., region 140 as shown in FIG. 1 ) can include channel structureregions 320, a dummy channel region 350 that encloses a plurality ofword line (WL) TAC regions 376.

As shown in FIG. 3C, in some embodiments, a plurality of slit structures314 each extending in WL direction can divide the 3D memory device intomultiple memory fingers 342. A top select gate cut 355 can be disposedin the middle of each memory finger 342 to divide the top select gate(TSG) of the memory finger into two portions.

Channel structure regions 320 can include an array of channel structures312, each including a plurality of stacked memory cells. Dummy channelregion 350 is sandwiched by two channel structure regions 320 in WLdirection. A plurality of WL TAC regions 376 arranged in a column alongBL direction are enclosed by dummy channel region 350. Each WL TACregion 376 can be defined by a barrier structure 324. Multiple TACs 326can be formed in each WL TAC region 376, which is enclosed laterally bybarrier structure 324.

In some embodiment, a width of each WL TAC region 376 in BL directioncan be less than a width of each memory finger 342. That is, barrierstructure 324 of each WL TAC region 376 can be located between twoneighboring slit structures 314. Since barrier structure 324 of each WLTAC region 376 does not complete block the conductive layers in dummychannel region 350, the top selective gates of channel structures 312between two channel structure regions 320 in each memory finger 342 onboth side of WL TAC region 376 can be interconnected by the topconductive layers in the alternating conductor/dielectric stack in dummychannel region 350.

In some embodiments, dummy channel structures 322 are formed outside WLTAC region 376 to provide mechanical support for the memory arraystructures. It is understood that dummy channel structures 322 can beformed in any regions outside WL TAC region 376, for example, in dummychannel region 350, and along the edges of channel structure regions 320adjacent to dummy channel region 350. It is noted that, channelstructures 312 and dummy channel structures 322 penetrate thealternating conductor/dielectric stack, while TACs 326 penetrate thealternating dielectric stack.

Accordingly, by disposing one WL TAC region 376 within each memoryfinger 342, the top conductive layers in the alternatingconductor/dielectric stack may not be blocked by the WL TAC region 376.Thus, no additional structure is requested to further interconnect thetop selective gates of channel structures 312 between two channelstructure regions 320 in each memory finger 342 on both side of WL TACregion 376. Therefore, multiple WL TAC regions 376 can be arranged ineach memory finger 342 along WL direction. That is, a memory 110 caninclude multiple memory blocks 115 in WL direction.

Referring to FIG. 3D, an enlarged plan view of the region 140 shown inFIG. 1 including other exemplary word line (WL) TAC regions of the 3Dmemory device is illustrated according to some alternative embodimentsof the present disclosure. The region 300D of the 3D memory device(i.e., region 140 as shown in FIG. 1 ) can include channel structureregions 320, a dummy channel region 350 that encloses a plurality ofword line (WL) TAC regions 376.

As shown in FIG. 3D, in some embodiments, a plurality of slit structures314, 316 each extending in WL direction can divide the 3D memory deviceinto multiple memory fingers 342. In some embodiments, slit structures314 can extend in WL direction all the way in through two or morechannel structure regions 320 and one or more dummy channel regions 350.At least one silt structure 316 can include a gap 318 in a dummy channelregion 350, as shown in FIG. 3D. A top select gate cut 355 can bedisposed in the middle of each memory finger 342 to divide the topselect gate (TSG) of the memory finger into two portions.

Channel structure regions 320 can include an array of channel structures312, each including a plurality of stacked memory cells. Dummy channelregion 350 is sandwiched by two channel structure regions 320 in WLdirection. A plurality of WL TAC regions 376 arranged in a column alongBL direction are enclosed by dummy channel region 350. Each WL TACregion 376 can be defined by a barrier structure 324. Multiple TACs 326can be formed in each WL TAC region 376, which is enclosed laterally bybarrier structure 324.

In some embodiment, a width of each WL TAC region 376 in BL directioncan be less than a width of each memory finger 342. That is, barrierstructure 324 of each WL TAC region 376 can be located between twoneighboring slit structures 314. Since barrier structure 324 of each WLTAC region 376 does not complete block the conductive layers in dummychannel region 350, the top selective gates of channel structures 312between two channel structure regions 320 in each memory finger 342 onboth side of WL TAC region 376 can be interconnected by the topconductive layers in the alternating conductor/dielectric stack in dummychannel region 350.

In some embodiments, dummy channel structures 322 are formed outside WLTAC region 376 to provide mechanical support for the memory arraystructures. It is understood that dummy channel structures 322 can beformed in any regions outside WL TAC region 376, for example, in dummychannel region 350, and along the edges of channel structure regions 320adjacent to Dummy channel region 350. It is noted that, channelstructures 312 and dummy channel structures 322 penetrate thealternating conductor/dielectric stack, while TACs 326 penetrate thealternating dielectric stack.

In some embodiments, one or more silt structure 316 can include a gap318 in a dummy channel region 350. The word lines in neighboring memoryfingers 342 can be interconnected by using conductive lines goingthrough the gap 318. For example, as shown in FIG. 3D, the slitstructures 314 that are at the edges of a memory block 115 can extend inWL direction all the way in through two or more channel structureregions 320 and one or more dummy channel regions 350, while siltstructures 316 inside of each memory block 115 can include one or moregaps 318 in corresponding dummy channel regions 350 respectively. Assuch, all the top select gates and/or word lines in the same memoryblock 115 can be interconnected without additional structures.

Accordingly, by disposing WL TAC region 376 within memory finger 342 andproviding gap 318 in silt structure 316, the top conductive layers inthe alternating conductor/dielectric stack may not be blocked by the WLTAC region 376, and word lines in neighboring memory fingers 342 can beinterconnected. Therefore, multiple WL TAC regions 376 can be arrangedin each memory finger 342 along WL direction. That is, a memory 110 caninclude multiple memory blocks 115 in WL direction. Such structure canhave a high integration level and a simply layout that can be easilyfabricated.

Referring to FIG. 4A, an enlarged plan view of the region 150 shown inFIG. 1 including an exemplary staircase structure (SS) TAC region of the3D memory device is illustrated according to some embodiments of thepresent disclosure. The region 400A of the 3D memory device (i.e.,region 150 as shown in FIG. 1 ) can include channel structure regions420, a staircase region 410, and a staircase structure (SS) TAC regions482.

Channel structure region 420 can include an array of channel structures412, each including a plurality of stacked memory cells. Staircaseregion 410 can include a staircase structure and an array of word linecontacts 432 formed on the staircase structure. In some embodiments, SSTAC region 482 is in staircase region 410. SS TAC region 482 can bedefined by a barrier structure 424 alone or in conjunction with an edgeof staircase region 410 of the 3D memory device. Multiple TACs 426 canbe formed in SS TAC region 482, which is enclosed laterally by at leastbarrier structure 424.

As shown in FIG. 4A, in some embodiments, a plurality of slit structures414, 416 each extending in WL direction can divide the 3D memory deviceinto multiple memory fingers 442, 444. In some embodiments, slitstructures 414 can extend in WL direction into at least a portion ofstaircase region 410. At least some silt structures 416 can include oneor more gaps 418 in staircase region 410. A top select gate cut 455 canbe disposed in the middle of each memory finger 442, 444 to divide thetop select gate (TSG) of the memory finger into two portions.

In some embodiments, one or more silt structure 416 can include a gap418 in staircase region 410. Word line contacts 432 in neighboringmemory fingers 442 can be interconnected by using conductive lines goingthrough the gap 418. For example, as shown in FIG. 4A, the slitstructures 414 that are at the edges of a memory block 115 can extend inWL direction all the way in through channel structure region 420 andstaircase region 410, while silt structures 416 inside of each memoryblock 115 can include one or more gaps 418 in staircase region 410. Assuch, all word line contacts 432 in the same memory block 115 can beinterconnected without additional structures.

It is noted that, a width of SS TAC region 482 in BL direction can belarger than a width of each memory finger 442, 444. That is, barrierstructure 424 in BL direction can cross at least two neighboring slitstructures 414. Since SS TAC region 482 occupies the area of a portionof staircase region 410 that corresponds to memory fingers 444completely blocked by barrier structure 424, the staircase structure inSS TAC region 482 is used for forming TACs 426 rather than forming wordline contacts 432 for memory fingers 444. Therefore, the staircasestructure corresponding to memory fingers 444 on the other side ofmemory plane 110 (not shown in FIG. 4B) can be used to form word linecontacts 432 rather than SS TAC region 482.

Accordingly, in some embodiments associated with such design of SS TACregion 482, SS TAC regions 482 on both sides of memory plane 110 do notoverlap in WL direction. That is, one memory finger corresponds to atmaximum one SS TAC region 482. Such deign can be suitable for zigzagword line decoder (X-DEC) routing. Further, in some embodimentsassociated with designs of SS TAC region 482 as well as WL TAC region372 described above in connection with FIG. 3B, due to the same reason,SS TAC regions 482 and WL TAC regions 372 do not overlap in WLdirection. That is, one memory finger corresponds to either one SS TACregion 482 or one WL TAC regions 372 at maximum.

Referring to FIG. 4B, an enlarged plan view of the region 150 shown inFIG. 1 including other exemplary staircase structure (SS) TAC regions ofthe 3D memory device is illustrated according to some alternativeembodiments of the present disclosure. The region 400B of the 3D memorydevice (i.e., region 150 as shown in FIG. 1 ) can include channelstructure regions 420, a staircase region 410, and a plurality ofstaircase structure (SS) TAC regions 484.

Channel structure region 420 can include an array of channel structures412, each including a plurality of stacked memory cells. Staircaseregion 410 can include a staircase structure and an array of word linecontacts 432 formed on the staircase structure. In some embodiments, SSTAC regions 484 are in staircase region 410. Each SS TAC regions 484 canbe defined by a barrier structure 424 alone or in conjunction with anedge of staircase region 410 of the 3D memory device. Multiple TACs 426can be formed in SS TAC region 482, which is enclosed laterally by atleast barrier structure 424.

As shown in FIG. 4B, in some embodiments, a plurality of slit structures414 each extending in WL direction in channel structure regions 420 candivide the 3D memory device into multiple memory fingers 442. A topselect gate cut 455 can be disposed in the middle of each memory finger442 to divide the top select gate (TSG) of the memory finger into twoportions. In some embodiments, slit structures 414 can extend in WLdirection into at least a portion of staircase region 410. In someembodiments, staircase region 410 can further include multiple slitstructures 416 that are not aligned with slit structures 414 in WLdirection. That is, distances between neighboring slit structures instaircase region 410 can be non-uniform. Some neighboring slit structurepairs can have a first distance that is larger than a second distancebetween other neighboring slit structure pairs.

In some embodiments, each SS TAC region 484 can be located between theneighboring slit structure pair that have the first distance. That is, awidth of SS TAC region 484 in BL direction can be less than the firstdistance. As such, other than the space occupied by SS TAC region 484,staircase region 410 between such neighboring slit structure pair thathave the first distance can have extra space to form word line contacts432.

Referring to FIGS. 5A-5B, schematic cross-sectional views of anexemplary 3D memory device at certain fabricating stages are shownaccording to some embodiments of the present disclosure. FIG. 5Aillustrates two separate chips 500A and 500B before bonding, while FIG.5B illustrates 3D memory device 500C that is formed by bonding firstchip 500A and second chip 500B. It is noted that, 3D memory device 500Cshown in FIG. 5B can be part of a non-monolithic 3D memory device, inwhich components (e.g., the peripheral device and array device) can beformed separately on different substrates. For example, 3D memory device500C can be region 130, region 140, or region 150 described above inconnection with FIG. 1 .

As shown in FIG. 5A, first chip 500A can include a first substrate 570and an array device above first substrate 570. It is noted that X and Yaxes are added in FIGS. 5A and 5B to further illustrate the spatialrelationship of the components in chips 500A and 500B, as well as 3Dmemory device 500C. First substrate 570 includes a first bondinginterface 534, which can be a lateral bottom surface extending laterallyin the X direction (the lateral direction, e.g., WL direction or BLdirection).

As used herein, whether one component (e.g., a layer or a device) is“on,” “above,” or “below” another component (e.g., a layer or a device)of a semiconductor device (e.g., array device) is determined relative tothe substrate of the semiconductor device (e.g., first substrate 570) inthe Y direction (the vertical direction) when the substrate ispositioned (or otherwise disposed) in the lowest plane of thesemiconductor device in the Y direction. The cross-sectional view of the3D memory device shown in FIGS. 5A and 5B is along a plane in BLdirection and Y direction. The same notion for describing spatialrelationship is applied throughout the present disclosure.

First substrate 570 can be used for supporting the array device, and caninclude an array interconnection layer 530 and a base substrate 540.Array interconnection layer 530 can be a back-end-of-line (BEOL)interconnection layer including one or more interconnection structures532 embedded in a dielectric layer. Interconnection structures 532 caninclude, but not limited to, contacts, single-layer/multi-layer vias,conductive lines, plugs, pads, and/or any other suitable conductivestructures that are made by conductive materials including, but notlimited to, W, Co, Cu, Al, doped silicon, silicides, or any combinationthereof. The dielectric layer can include dielectric materialsincluding, but not limited to, silicon oxide, silicon nitride, siliconoxynitride, or any combination thereof. One or more portions ofinterconnection structures 532 can be exposed on the first bondingsurface 534 of first substrate 570.

Base substrate 540 can include any suitable semiconductor material thatcan include silicon (e.g., monocrystalline silicon, polycrystallinesilicon), silicon germanium (SiGe), gallium arsenide (GaAs), germanium(Ge), silicon on insulator (SOI), germanium on insulator (GOI), or anysuitable combination thereof. In some embodiments, base substrate 540 isa thinned substrate (e.g., a semiconductive layer), which was thinned bygrinding, wet/dry etching, chemical mechanical polishing (CMP), or anycombination thereof. In some embodiments, base substrate 540 can be asingle layer substrate or a multi-layer substrate, for example, amonocrystalline single-layer substrate, a polycrystalline silicon (polysilicon) single-layer substrate, a polysilicon and metal multi-layersubstrate, etc.

Further, one or more openings 542 can be formed in regions of basesubstrate 540 that correspond to one or more through array contact (TAC)structures of the array device. In some embodiments, a plurality of TACs526 can go through one or more openings 542 to electrically connect withone or more interconnection structures 532 in array interconnectionlayer 530. In some other embodiments, a plurality of conductive plugs(not shown) penetrating through the one or more openings 542 can be usedto electrically connect the plurality of TACs to one or moreinterconnection structures 532 in array interconnection layer 530. It isnoted that, one or more openings 542 are filled with dielectric materialto insulate the plurality of TACs 526 and/or plurality of conductiveplugs.

In some embodiments, array device can be a NAND Flash memory device inwhich memory cells are provided in the form of an array of channelstructures (not shown in FIGS. 5A and 5B) extending in Y direction abovesubstrate 570. The array device can include a plurality of channelstructures that extend through an alternating conductor/dielectric stack580 including a plurality of conductive layer 580A and dielectric layer580B pairs. The number of the conductor/dielectric layer pairs inalternating conductor/dielectric stack 580 (e.g., 32, 64, or 96) can setthe number of memory cells in 3D memory device.

Conductive layers 580A and dielectric layers 580B in alternatingconductor/dielectric stack 580 alternate in Y direction. In other words,except the ones at the top or bottom of alternating conductor/dielectricstack 580, each conductive layer 580A can be adjoined by two dielectriclayers 580B on both sides, and each dielectric layer 580B can beadjoined by two conductive layers 580A on both sides. Conductive layers580A can each have the same thickness or have different thicknesses.Similarly, dielectric layers 580B can each have the same thickness orhave different thicknesses. Conductive layers 580A can includeconductive materials including, but not limited to, tungsten (W), cobalt(Co), copper (Cu), aluminum (Al), polycrystalline silicon (polysilicon),doped silicon, silicides, or any combination thereof. Dielectric layers580B can include dielectric materials including, but not limited to,silicon oxide, silicon nitride, silicon oxynitride, or any combinationthereof. In some embodiments, conductive layers 580A include metallayers, such as W, and dielectric layers 580B include silicon oxide.

In some embodiments, the array device further includes slit structures514. Each slit structure 514 can extend in the Y direction throughalternating conductor/dielectric stack 580. Slit structure 514 can alsoextend laterally (i.e., substantially parallel to the substrate) toseparate alternating conductor/dielectric stack 580 into multipleblocks. Slit structure 514 can include a slit filled with conductivematerials including, but not limited to, W, Co, Cu, Al, silicides, orany combination thereof. Slit structure 514 can further include adielectric layer with any suitable dielectric materials between thefilled conductive materials and alternating conductor/dielectric stack580 to electrically insulate the filled conductive materials fromsurrounding conductive layers 580A in alternating conductor/dielectricstack 580. As a result, slit structures 514 can separate 3D memorydevice 500 into multiple memory fingers (e.g., as shown in FIGS. 2,3A-3D, 4A-4B in the plan view).

In some embodiments, slit structure 514 functions as the source contactfor channel structures in the same memory finger that share the samearray common source. Slit structure 514 can thus be referred to as a“common source contact” of multiple channel structures. In someembodiments, base substrate 540 includes a doped region 544 (includingp-type or n-type dopants at a desired doping level), and the lower endof slit structure 514 is in contact with doped region 544 of basesubstrate 540.

In some embodiments, an alternating dielectric stack 560 can be locatedin a region that is surrounded laterally by a barrier structure 516 onbase substrate 540. Alternating dielectric stack 560 can include aplurality of dielectric layer pairs. For example, alternating dielectricstack 560 is formed by an alternating stack of a first dielectric layer560A and a second dielectric layer 560B that is different from firstdielectric layer 560A. In some embodiments, first dielectric layer 560Aincludes silicon nitride and second dielectric layer 560B includessilicon oxide. Second dielectric layers 560B in alternating dielectricstack 560 can be the same as dielectric layers 580B in alternatingconductor/dielectric stack 580. In some embodiments, the number ofdielectric layer pairs in alternating dielectric stack 560 is the sameas the number of conductor/dielectric layer pairs in alternatingconductor/dielectric stack 580.

In some embodiments, barrier structure 516 extending in the Y directionto separate laterally alternating conductor/dielectric stack 580 andalternating dielectric stack 560. That is, barrier structure 516 canbecome the boundary between alternating conductor/dielectric stack 580and alternating dielectric stack 560. Alternating dielectric stack 560can be enclosed laterally by at least barrier structure 516. In someembodiments, barrier structure 516 is in a closed shape (e.g., arectangle, a square, a circle, etc.) in the plan view to completelyenclose alternating dielectric stack 560. For example, as shown in FIGS.3A-3D, barrier structures 324 are in a rectangle shape in the plan viewto completely enclose the alternating dielectric stack in WL TAC regions372, 376. In some embodiments, barrier structure 516 is not in a closedshape in the plan view, but can enclose alternating dielectric stack 560in conjunction with one or more edges of array device. For example, asshown in FIGS. 4A and 4B, barrier structure 424, in conjunction with theedge(s) of the 3D memory device, encloses the alternating dielectricstack in SS TAC regions 482, 484.

As shown in FIG. 5A, first chip 500A further includes a plurality ofTACs 526 each extending in Y direction through alternating dielectricstack 560. TACs 526 can be formed only inside the area enclosedlaterally by at least barrier structure 516, which includes a pluralityof dielectric layer pairs. That is, TACs 526 can extend verticallythrough dielectric layers (e.g., first dielectric layers 560S and seconddielectric layers 560B), but not through any conductive layers (e.g.,conductive layers 580A). Each TAC 526 can extend through the entirethickness of alternating dielectric stack 560, (e.g., all the dielectriclayer pairs in Y direction). In some embodiments, TAC 526 furtherpenetrate base substrate 540 through opening 542 and electricallycontact interconnection structure 532.

TACs 526 can carry electrical signals from and/or to the array device,such as part of the power bus, with shorten interconnect routing. Insome embodiments, TACs 526 can provide electrical connections betweenthe array device and the peripheral devices (not shown in FIGS. 5A and5B) through one or more interconnection structures 532. TACs 526 canalso provide mechanical support to alternating dielectric stack 560.Each TAC 526 can include a vertical opening through alternatingdielectric stack 560 and that is filled with conductive materials,including, but not limited to, W, Co, Cu, Al, doped silicon, silicides,or any combination thereof. In some embodiments, as TACs 526 are formedin alternating dielectric stack 560 (surrounding by dielectric layers),an additional dielectric layer between TAC 526 and alternatingdielectric stack 560 is not needed for insulation purposes.

Second chip 500B can include a second substrate 510 and a peripheralinterconnection layer 520 on the second substrate 510. Second substrate510 can include any suitable semiconductor material that can includesilicon (e.g., monocrystalline silicon, polycrystalline silicon),silicon germanium (SiGe), gallium arsenide (GaAs), germanium (Ge),silicon on insulator (SOI), germanium on insulator (GOI), or anysuitable combination thereof. Second substrate 510 can be a single layersubstrate or a multi-layer substrate, for example, a monocrystallinesingle-layer substrate, a polycrystalline silicon (polysilicon)single-layer substrate, a polysilicon and metal multi-layer substrate,etc. In some embodiments, second substrate 510 is a thinned substrate(e.g., a semiconductive layer), which was thinned by grinding, wet/dryetching, chemical mechanical polishing (CMP), or any combinationthereof.

One or more peripheral circuits (not shown in FIGS. 5A and 5B) can beformed on the second substrate 510. The one or more peripheral circuitscan include any suitable digital, analog, and/or mixed-signal peripheralcircuits used for facilitating the operation of the 3D memory device.For example, the one or more peripheral circuits can include one or moreof a page buffer, a decoder (e.g., a row decoder and a column decoder),a latch, a sense amplifier, a driver, a charge pump, a current orvoltage reference, or any active or passive components of the circuits(e.g., transistors, diodes, resistors, or capacitors). In someembodiments, the one or more peripheral circuits can be formed on secondsubstrate 510 using complementary metal-oxide-semiconductor (CMOS)technology (also known as a “CMOS chip”).

In some embodiments, peripheral interconnection layer 520 can includeone or more interconnection structures 522 embedded in a dielectriclayer for electrically connecting the one or more peripheral circuits tothe array device above the first substrate 570. The one or moreinterconnection structures 522 can include any suitable conductivestructures including, but not limited to, contacts,single-layer/multi-layer vias, conductive layer(s), plugs, pads, and/orany other suitable conductive structures that are made by conductivematerials including, but not limited to, W, Co, Cu, Al, doped silicon,silicides, or any combination thereof. Dielectric layer of peripheralinterconnection layer 520 can have a single-layer structure or amulti-layer structure and include dielectric materials including, butnot limited to, silicon oxide, silicon nitride, silicon oxynitride,doped silicon oxide, or any combination thereof.

Second chip 500B can include a second bonding interface 524, which canbe a lateral top surface extending laterally in the X direction (thelateral direction, e.g., WL direction or BL direction). In someembodiments, first bonding surface 534 of first chip 500A is bonded tosecond bounding surface 524 of second chip 500B. That is, peripheralinterconnection layer 520 and array interconnection 530 can be bonded ina face-to-face manner. As such, first chip 500A and second chip 500B canbe bonded at bonding interface 555 to form 3D memory device 500C, asshown in FIG. 5B.

Bonding interface 555 is between peripheral interconnection layer 520and array interconnection 530. That is, bonding interface 555 can bebetween two dielectric layers, such as between a silicon nitride layerand a silicon oxide layer. Bonding interface 555 can also be between twoconductive layers, such as between two metal (e.g., Cu) layers. In someembodiments, the bonding interface includes both the interface betweendielectric layers and the interface between conductive layers. In someembodiments, one or more interconnection structures 532 in first chip500A and one or more interconnection structures 522 in second chip 500Bcan be contacted with each other at bonding interface 555 forelectrically interconnecting one or more TACs 526 in first chip 500A andthe peripheral circuits in second chip 500B.

Bonding interface 555 can be formed by chemical bonds between thedielectric layers and/or the conductive layers on both sides of thebonding interface, e.g. first bonding surface 534 and second surface 524as shown in FIG. 5A. Bonding interface 555 can be formed by physicalinteraction (e.g., inter-diffusion) between the dielectric layers and/orthe conductive layers on both sides of the bonding interface. In someembodiments, the bonding interface is formed after a plasma treatment ora thermal treatment of the surfaces from both sides of the bondinginterface prior to the bonding process.

By using the bonding through contact hole on the back side of the firstsubstrate, a pad layer of the interconnection structures can be formedon the back surface of the first substrate corresponding to the arraydevice. Since the pad layer is formed on the back surface of the firstsubstrate rather than the surrounding regions of the first substrate,the size of the 3D memory device can be reduced and the integrationdegree of the 3D memory device can be increased.

Referring to FIGS. 6A-6B, schematic flowcharts of an exemplary methodfor forming a 3D memory device are illustrated according to someembodiments of the present disclosure. It should be understood that theoperations shown in FIGS. 6A-6B are not exhaustive and that otheroperations can be performed as well before, after, or between any of theillustrated operations. FIGS. 7A-7C illustrate schematic cross-sectionalviews of another exemplary 3D memory device at certain fabricatingstages of the method shown in FIGS. 6A-6B according to some otherembodiments of the present disclosure.

Referring to FIG. 6A, a flowchart of an exemplary method 600A forforming an array device and an array interconnection layer isillustrated according to some embodiments. As shown in FIG. 6A, method600A starts at operation 604, in which an alternating dielectric stackis formed on a first substrate. In some embodiments, the first substratecan be any suitable semiconductor substrate having any suitablestructure, such as a monocrystalline single-layer substrate, apolycrystalline silicon (polysilicon) single-layer substrate, apolysilicon and metal multi-layer substrate, etc.

A plurality of dielectric layer pairs (also referred to herein as an“alternating dielectric stack”) can be formed on the first substrate.The alternating dielectric stack can include an alternating stack of afirst dielectric layer and a second dielectric layer that is differentfrom first dielectric layer. In some embodiments, each dielectric layerpair includes a layer of silicon nitride and a layer of silicon oxide.In some embodiments, there are more layers than the dielectric layerpairs made of different materials and with different thicknesses inalternating dielectric stack. The alternating dielectric stack can beformed by one or more thin film deposition processes including, but notlimited to, CVD, PVD, ALD, or any combination thereof.

Method 600A proceeds to operation 606, in which a staircase structure isformed at one or more edges of the alternating dielectric stack. In someembodiments, a trim-etch process can be performed on at least one side(in the lateral direction) of alternating dielectric stack to form thestaircase structure with multiple levels. Each level can include one ormore dielectric layer pairs with alternating first dielectric layer andsecond dielectric layer.

Method 600A proceeds to operation 608, a plurality of channel structuresand one or more barrier structures are formed. Each channel structureand each barrier structure can extend vertically through the alternatingdielectric stack.

In some embodiments, fabrication processes to form channel structureinclude forming a channel hole that extends vertically throughalternating dielectric stack by, for example, wet etching and/or dryetching. In some embodiments, fabrication processes to form channelstructure further include forming semiconductor channel and memory filmbetween semiconductor channel and the dielectric layer pairs inalternating dielectric stack. Semiconductor channel can includesemiconductor materials, such as polysilicon. Memory film can be acomposite dielectric layer, such as a combination of a tunneling layer,a storage layer, and a blocking layer.

The tunneling layer can include dielectric materials including, but notlimited to, silicon oxide, silicon nitride, silicon oxynitride, or anycombination thereof. Electrons or holes from the semiconductor channelcan tunnel to a storage layer through the tunneling layer. The storagelayer can include materials for storing charge for memory operation. Thestorage layer materials include, but are not limited to, siliconnitride, silicon oxynitride, a combination of silicon oxide and siliconnitride, or any combination thereof. The blocking layer can includedielectric materials including, but not limited to, silicon oxide or acombination of silicon oxide/silicon nitride/silicon oxide (ONO). Theblocking layer can further include a high-k dielectric layer, such as analuminum oxide (Al₂O₃) layer. Semiconductor channel and memory film canbe formed by one or more thin film deposition processes, such as ALD,CVD, PVD, any other suitable processes, or any combination thereof.

In some embodiments, fabrication processes to form barrier structure aresimilarly and simultaneously performed as the fabrication processes toform channel structure, thereby reducing fabrication complexity andcost. In some other embodiments, channel structure and barrier structureare formed in different fabrication steps so that barrier structure canbe filled with materials different from the materials filling channelstructure.

In some embodiments, fabrication processes to form a barrier structureinclude forming a trench that extends vertically through alternatingdielectric stack by, for example, wet etching and/or dry etching. Afterthe trench is formed through alternating dielectric stack, one or morethin film deposition processes can be performed to fill the trench withdielectric materials including, but not limited to, silicon oxide,silicon nitride, silicon oxynitride, silicon oxide/siliconnitride/silicon oxide (ONO), aluminum oxide (Al₂O₃), etc., or anycombination thereof.

By forming the one or more barrier structures, alternating dielectricstack can be separated into two types of regions: one or more insideregions each enclosed laterally by at least a barrier structure (inconjunction with the edge(s) of alternating dielectric stack in someembodiments) and an outside region in which channel structures and/orword line contacts can be formed. It is note that, each inside regioncorresponds to an opening in the first substrate.

In some embodiments, at least one inside region can be used to form a BLTAC structure as described above in connection with FIG. 2 . As such,the barrier structure enclosing such inside region can include twoparallel barrier walls that extend along WL direction.

In some embodiments, at least one inside region can be used to form a BLTAC structure as described above in connection with FIG. 3A or 3B. Assuch, the barrier structure enclosing such inside region can have arectangular shape. A width of the barrier structure in BL direction canbe larger than a distance between two neighboring slit structures formedin subsequent processes.

In some embodiments, at least one inside region can be used to form a BLTAC structure as described above in connection with FIG. 3C or 3D. Assuch, the barrier structure enclosing such inside region can have arectangular shape. A width of the barrier structure in BL direction canbe less than a distance between two neighboring slit structures formedin subsequent processes.

In some embodiments, at least one inside region can be used to form a SSTAC structure as described above in connection with FIG. 4A. As such,the barrier structure for separating such inside region can have arectangular shape with one open edge facing the edge of the staircasestructure. A width of the barrier structure in BL direction can belarger than a distance between two neighboring slit structures formed insubsequent processes.

In some embodiments, at least one inside region can be used to form a SSTAC structure as described above in connection with FIG. 4B. As such,the barrier structure for separating such inside region can have arectangular shape with one open edge facing the edge of the staircasestructure. A width of the barrier structure in BL direction can be lessthan a maximum distance between two neighboring slit structures formedin staircase region in subsequent processes.

In some embodiments, dummy channel structures can be formedsimultaneously with channel structures. The dummy channel structures canextend vertically through the alternating layer stack and can be filledwith the same materials as those in channel structures. Different fromchannel structures, contacts are not formed on the dummy channelstructures to provide electrical connections with other components ofthe 3D memory device. Thus, the dummy channel structures cannot be usedfor forming memory cells in the 3D memory device.

Method 600A proceeds to operation 610, in which a plurality of slits areformed, and first dielectric layers in a portion of the alternatingdielectric stack are replaced with conductive layers through theplurality of slits. For example, multiple parallel slit extending in WLdirection can be first formed by wet etching and/or dry etching ofdielectrics (e.g., silicon oxide and silicon nitride) throughalternating dielectric stack in the outside area. In some embodiments,doped regions are then formed in the first substrate under each slit by,for example, ion implantation and/or thermal diffusion through theslits. It is understood that doped regions can be formed in an earlierfabrication stage, for example, prior to the formation of the slits,according to some embodiments.

In some embodiments, the formed slits are used for the gate replacementprocess (also known as the “word line replacement” process) thatreplaces, in the outside area of alternating dielectric stack, firstdielectric layers (e.g., silicon nitride) with conductive layers (e.g.,W). It is noted that, the gate replacement occurs only in the outsidearea of alternating dielectric stack, but not in the inside area, due tothe formation of barrier structure. Barrier structure can prevent theetching of first dielectric layers (e.g., silicon nitride) in the insidearea of alternating dielectric stack because barrier structure is filledmaterials that cannot be etched by the etching step of the gatereplacement process.

As a result, after the gate replacement process, alternating dielectricstack in the outside region becomes alternating conductor/dielectricstack. The replacement of first dielectric layers with conductive layerscan be performed by wet etching first dielectric layers (e.g., siliconnitride) selective to second dielectric layers (e.g., silicon oxide) andfilling the structure with conductive layers (e.g., W). Conductivelayers can be filled by PVD, CVD, ALD, any other suitable process, orany combination thereof. Conductive layers can include conductivematerials including, but not limited to, W, Co, Cu, Al, polysilicon,silicides, or any combination thereof. The formed alternatingconductor/dielectric stack and remaining alternating dielectric stackcan constitute an alternating stack.

Method 600A proceeds to operation 612, in which slit structures areformed by filling (e.g., depositing) conductive materials into the slitsby PVD, CVD, ALD, any other suitable process, or any combinationthereof. Slit structures can include conductive materials including, butnot limited to, W, Co, Cu, Al, polysilicon, silicides, or anycombination thereof. In some embodiments, a dielectric layer (e.g., asilicon oxide layer) is formed first between the conductive materials ofslit structure and conductive layers surrounding slit structure inalternating conductor/dielectric stack for insulation purposes. Thelower end of slit structure can be in contact with doped region.

Method 600A proceeds to operation 614, in which a plurality of TACs areformed through alternating dielectric stack. TACs can be formed in theone or more inside regions by first etching vertical openings (e.g., bywet etching and/or dry etching), followed by filling the openings withconductive materials using ALD, CVD, PVD, any other suitable processes,or any combination thereof. The conductive materials used for fillingthe local contacts can include, but are not limited to, W, Co, Cu, Al,polysilicon, silicides, or any combination thereof. In some embodiments,other conductive materials are also used to fill the openings tofunction as a barrier layer, an adhesion layer, and/or a seed layer.

TACs can be formed by etching through the entire thickness ofalternating dielectric stack. Because alternating dielectric stackincludes alternating layers of dielectrics, such as silicon oxide andsilicon nitride, the openings of TACs can be formed by deep etching ofdielectric materials (e.g., by deep reactive-ion etching (DRIE) processor any other suitable anisotropic etch process). In some embodiments,although TACs are formed after the gate replacement, by reserving anarea of alternating dielectric stack that is not affected by the gatereplacement process (not turned into alternating conductor/dielectricstack), TACs are still formed through dielectric layers (without passingthrough any conductive layers), which simplifies the fabrication processand reduces the cost.

Method 600A proceeds to operation 616, in which an array interconnectionlayer is formed on the alternating stack. The array interconnectionlayer can be used to transfer electrical signals between the TACs andother parts of the 3D memory devices, such as the peripheral circuits.In some embodiments, fabrication processes to form the arrayinterconnection layer include forming a dielectric layer, followed byforming a plurality of interconnection structures. One or more of theinterconnection structures can be in contact with the TACs respectively.

The dielectric layer can include one or more layers of dielectricmaterials such as silicon oxide, silicon nitride, silicon oxynitride, orany combination thereof. The interconnection structures can include, butnot limited to, contacts, single-layer/multi-layer vias, conductivelines, plugs, pads, and/or any other suitable conductive structures thatare made by conductive materials including, but not limited to, W, Co,Cu, Al, doped silicon, silicides, or any combination thereof.

In some embodiments, fabrication processes to form the interconnectionstructures include forming openings in the dielectric layer, followed byfilling the openings with conductive materials. The openings in thedielectric layer can be filled with conductive materials by ALD, CVD,PVD, any other suitable processes, or any combination thereof. In someembodiments, fabrication processes to form the interconnectionstructures further include forming one or more conductive layers and oneor more contact layer in the dielectric layer. The conductive layers andthe conductor contact layers can be formed by any suitable known BEOLmethods.

Referring to FIG. 6B, a flowchart of an exemplary method 600B forforming a peripheral circuit and a peripheral interconnection layer isillustrated according to some embodiments. As shown in FIG. 6B, method600B starts at operation 622, in which a peripheral circuit is formed ona second substrate. In some embodiments, the second substrate can be anysuitable semiconductor substrate having any suitable structure, such asa monocrystalline single-layer substrate, a polycrystalline silicon(polysilicon) single-layer substrate, a polysilicon and metalmulti-layer substrate, etc.

The peripheral circuit can include any suitable peripheral devicesformed on the second substrate and any suitable interconnection circuitsbetween the peripheral devices. One or more peripheral devices and/orinterconnection circuits can be formed by a plurality of processingsteps including, but not limited to, photolithography, dry/wet etch,thin film deposition, thermal growth, implantation, CMP, or anycombination thereof.

Method 600B proceeds to operation 624, in which a peripheralinterconnection layer is formed on the peripheral circuit. Theperipheral interconnection layer can include a dielectric layer abovethe peripheral circuit and one or more interconnection structures formedin the dielectric layer. The dielectric layer can include one or morelayers of dielectric materials such as silicon oxide, silicon nitride,silicon oxynitride, or any combination thereof. The interconnectionstructures can include, but not limited to, contacts,single-layer/multi-layer vias, conductive lines, plugs, pads, and/or anyother suitable conductive structures that are made by conductivematerials including, but not limited to, W, Co, Cu, Al, doped silicon,silicides, or any combination thereof.

In some embodiments, the interconnection structures can be formed byusing any suitable known middle-end-of-line (MEOL) method. For example,fabrication processes to form the interconnection structures can includeforming openings in the dielectric layer, followed by filling theopenings with conductive materials. The openings in the dielectric layercan be filled with conductive materials by ALD, CVD, PVD, any othersuitable processes, or any combination thereof. Further, fabricationprocesses to form the interconnection structures can include forming oneor more conductive layers and one or more contact layer in thedielectric layer. The conductive layers and the conductor contact layerscan include conductor materials deposited by one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD,electroplating, electroless plating, or any combination thereof.Fabrication processes to form the conductive layer and contact layerscan also include photolithography, CMP, wet/dry etch, or any combinationthereof.

As shown in FIG. 7A, dielectric layer 740 is formed on the secondsubstrate 750, while a plurality of interconnection structures 742 areformed in the dielectric layer 740. It is noted that, the peripheralcircuit is not shown in FIG. 7A. The plurality of interconnectionstructures 742 are electrically in contact with the peripheral circuit.

Method 600B proceeds to operation 626, in which the array device (andthe array interconnection layer) is positioned (or otherwise disposed)below the first substrate (e.g., by flipping the first substrate upsidedown), and the array interconnection layer is aligned with theperipheral interconnection layer. As illustrated in FIG. 7A, arrayinterconnection layer 730 can be placed below second silicon substrate710. TACs 726 can be penetrate alternating stack 720. In someembodiments, aligning array interconnection layer 730 with peripheralinterconnection layer 740 is performed by aligning interconnectionstructures 733 in array interconnection layer 730 with interconnectionstructures 742 in peripheral interconnection layer 740. As a result,interconnection structures 733 can electrically contact interconnectionstructures 742 when the array device is joined with the peripheralcircuit in the subsequent operation.

Method 600B proceeds to operation 628, as illustrated in FIG. 6B, inwhich the array interconnection layer is joined with the peripheralinterconnection layer. The array interconnection layer can be joinedwith the peripheral interconnection layer by flip-chip bonding the firstand second substrates. In some embodiments, the array interconnectionlayer and the peripheral interconnection layer are joined by hybridbonding of the first substrate and the second substrate in aface-to-face manner, such that the array interconnection layer is aboveand in contact with the peripheral interconnection layer in theresulting 3D memory device.

Hybrid bonding (also known as “metal/dielectric hybrid bonding”) can bea direct bonding technology (e.g., forming bonding between surfaceswithout using intermediate layers, such as solder or adhesives), whichobtains metal-metal bonding and dielectric-dielectric bondingsimultaneously. As illustrated in FIG. 7B, array interconnection layer730 can be joined with peripheral interconnection layer 740, therebyforming a bonding interface 734.

In some embodiments, a treatment process can be used to enhance thebonding strength between array interconnection layer 730 and peripheralinterconnection layer 740 before or during the joining process of thetwo interconnection layers. In some embodiments, each of dielectriclayers in the array interconnection layer 730 and peripheralinterconnection layer 740 includes silicon oxide or silicon nitride. Forexample, a plasma treatment can be used to treat the surfaces of arrayinterconnection layer 730 and peripheral interconnection layer 740 sothat the surfaces of the two interconnection layers form chemical bondsbetween the two dielectric layers. As another example, a wet process canbe used to treat the surfaces of array interconnection layer 730 andperipheral interconnection layer 740 so that the surfaces of the twointerconnection layers form preferable chemical bonds to enhance thebonding strength between two dielectric layers. As yet another example,a thermal process that can be performed at a temperature from about 250°C. to about 600° C. (e.g., from 250° C. to 600° C.). The thermal processcan cause inter-diffusion between interconnection structures 733 and742. As a result, corresponding interconnection structures 733 and 742can be inter-mixed after the joining process. In some embodiments,interconnection structures 733 and 742 can each includes Cu.

Method 600B proceeds to operation 630, as illustrated in FIG. 6B, inwhich the first substrate is thinned so that the thinned first substrateserves as a semiconductor layer above the array device (e.g., the NANDstrings). As illustrated in FIG. 7C, the thinned first substrate 710 canbe a single crystalline silicon layer. In some embodiments, after thethinning process, single crystalline silicon layer 710 has a thicknessbetween about 5 nm and about 50 μm (e.g., 5 nm, 50 nm, 500 nm, 5 μm, 50μm, any range bounded on the lower end by any of these values, or in anyrange defined by any two of these values). First substrate 710 can bethinned by processes including, but not limited to, wafer grinding, dryetch, wet etch, CMP, any other suitable processes, or any combinationthereof.

Method 600B proceeds to operation 632, as illustrated in FIG. 6B, inwhich a BEOL interconnection layer can be formed above the semiconductorlayer. As illustrated in FIG. 7C, a BEOL interconnection layer is formedabove first substrate 710. BEOL interconnection layer can include adielectric layer 760 overlay the first substrate 710, and a plurality ofinterconnection structures 762 in the dielectric layer 760.

In some embodiments, fabricating process of interconnection structures762 can include separate process steps for forming one or more contactlayers, conductive layers, and/or pad layers in a dielectric layer.Dielectric layer 760 can be a combination of multiple dielectric layersformed at separate process steps. Interconnection structures 762 caninclude conductor materials including, but not limited to, W, Co, Cu,Al, doped silicon, silicides, or any combination thereof. In someembodiments, fabricating process of interconnection structures 762further includes forming one or more openings in first substrate 710.The one or more openings can corresponding to one or more through arraycontact TAC structures (e.g., word line (WL) TAC structure as shown inFIG. 2 , bit line (BL) TAC structures as shown in FIGS. 3A-3D, andstaircase structure (SS) TAC structures as shown in FIGS. 4A-4B). Assuch, one or more interconnection structures 762 penetrate dielectriclayer 760 and first substrate 710 and are electrically connected to TACs726 respectively. Therefore, TACs 726 can be used to electricallyinterconnect external circuits or devices to transfer electrical signalsbetween the joined array and/or peripheral circuits and the externalcircuits or devices.

Various embodiments in accordance with the present disclosure provide a3D memory device with smaller die size, higher device density, andimproved performance compared with other 3D memory devices. Byvertically stacking an array device and BEOL interconnect above aperipheral circuit, the density of 3D memory devices can be increased.By providing through array contact (TAC) structures for a memory array,vertical interconnects between the stacked array device and peripheraldevice (e.g., for power bus and metal routing) can be realized to reducemetal levels and shrink die size. In some embodiments, the through arraycontact structures disclosed herein are formed through a stack ofalternating dielectric layers, which can be more easily etched to formthrough holes therein compared with a stack of alternating conductor anddielectric layers, thereby reducing the process complexity andmanufacturing cost.

Accordingly, one aspect of the present discloses a three-dimensional(3D) NAND memory device including an alternating layer stack disposed ona first substrate. The alternating layer stack can include a firstregion including an alternating dielectric stack comprising a pluralityof dielectric layer pairs, and a second region including an alternatingconductor/dielectric stack comprising a plurality ofconductor/dielectric layer pairs. The 3D NAND memory device furtherincludes a barrier structure extending vertically through thealternating layer stack to laterally separate the first region from thesecond region, and a plurality of through array contacts in the firstregion. Each through array contact extends vertically through thealternating dielectric stack. The 3D NAND memory device further includesan array interconnection layer disposed on the alternating layer stackat an end of the alternating layer stack opposite to the firstsubstrate. The array interconnection layer includes at least one firstinterconnection structure that is electrically connected with at leastone through array contact. The 3D NAND memory device further includes aperipheral circuit formed on a second substrate, and a peripheralinterconnection layer on the at least one peripheral circuit, andincluding at least one second interconnection structure that iselectrically connected with the peripheral circuit. The arrayinterconnection layer is bonded on the peripheral interconnection layer,such that the peripheral circuit is electrically connected with the atleast one of the plurality of through the at least one firstinterconnection structure and the at least one second interconnectionstructure.

The barrier structure comprises silicon oxide and silicon nitride. Eachof the plurality of dielectric layer pairs comprises a silicon oxidelayer and a silicon nitride layer, and each of the plurality ofconductor/dielectric layer pairs comprises a metal layer and a siliconoxide layer. A number of the plurality of dielectric layer pairs is atleast 32, and a number of the plurality of conductor/dielectric layerpairs is at least 32.

The 3D NAND memory device further includes a plurality of slitstructures each extending vertically through the alternatingconductor/dielectric stack and laterally along a word line direction todivide the alternating conductor/dielectric stack into a plurality ofmemory fingers.

In some embodiments, the barrier structure laterally extends along theword line direction. The first region is separated by the barrierstructure from the second region and sandwiched between two neighboringslit structures.

In some embodiments, the barrier structure laterally extends along a bitline direction that is different than the word line direction tolaterally separate the first region from the second region. The bit linedirection can be perpendicular to the word line direction.

In some embodiments, a width of the first region enclosed by the barrierstructure in the bit line direction can be larger than a distancebetween two neighboring slit structures.

In some embodiments, the first region enclosed by the barrier structurecan be sandwiched between two top selective gate staircase regions inthe word line direction. At least top two layers of the alternatingconductor/dielectric stack that is away from the first substrate in eachtop selective gate staircase region can have a staircase structure. Atleast one conductive layer on the staircase structure in the topselective gate staircase regions and configured to interconnect topselect gates that are above the alternating conductor/dielectric stackin the second region and on both sides of first region enclosed by thebarrier structure in the word line direction.

The 3D NAND memory device further includes at least two first regionsenclosed by corresponding barrier structures, each first regionextending parallel along the bit line direction.

The 3D NAND memory device further includes a plurality of barrierstructures to enclose a plurality of first regions from the secondregion, such that the plurality of first regions are aligned in the bitline direction. Each of the plurality of first regions is sandwichedbetween two neighboring slit structures in the bit line direction. Insome embodiments, the plurality of first regions are aligned so as toform at least two columns in the bit line direction.

In some embodiments, at least one silt structure, that is sandwiched bytwo neighboring barrier structures in the bit line direction, includes agap and the at least one silt structure is configured to interconnectword lines of neighboring ones of the plurality of memory fingers.

In some embodiments, the first region is separated by the barrierstructure from a staircase structure on an edge of the alternatingconductor/dielectric layer stack along the bit line direction. Anopening of the barrier structure is at an edge of the alternating layerstack along the bit line direction.

In some embodiments, a width of the first region in the bit linedirection is larger than a distance between two neighboring slitstructures.

In some embodiments, a width of the first region in the bit linedirection is less than a maximum distance between two neighboring slitstructures in the staircase structure on the edge of the alternatinglayer stack along the bit line direction.

The 3D memory device can further include a plurality of dummy channelstructures adjacent to the barrier structure, each dummy channelstructure extending vertically through the alternatingconductor/dielectric stack.

Another aspect of the present disclosure provides a method for forming athree-dimensional (3D) NAND memory device. The method can include:forming, on a first substrate, an alternating dielectric stackcomprising a plurality of dielectric layer pairs, each of the pluralityof dielectric layer pairs comprising a first dielectric layer and asecond dielectric layer different from the first dielectric layer;forming at least one barrier structure each extending vertically throughthe alternating dielectric stack, such that the at least one barrierstructure separates the alternating dielectric stack into at least onefirst region enclosed laterally by at least the barrier structure, and asecond region; forming a plurality of slits, and replacing, through theslits, first dielectric layers in the second portion of the alternatingdielectric stack with conductor layers to form an alternatingconductor/dielectric stack comprising a plurality ofconductor/dielectric layer pairs; depositing a conductive material intothe slits to form a plurality of slit structures; forming a plurality ofthrough array contacts in the first region, each through array contactextending vertically through the alternating dielectric stack; formingan array interconnection layer on the alternating layer stack andincluding at least one first interconnection structure that iselectrically connected with at least one through array contact; andbonding the array interconnection layer to a peripheral interconnectionlayer on a second substrate and including at least one secondinterconnection structure that is electrically connected with aperipheral circuit formed on the second substrate, such that theperipheral circuit is electrically connected with the at least one ofthe plurality of through the at least one first interconnectionstructure and the at least one second interconnection structure.

The method can further include: prior to bonding the arrayinterconnection layer to the peripheral interconnection layer, formingthe peripheral circuit on the second substrate; forming the peripheralinterconnection layer on the peripheral circuit, such that the at leastone second interconnect structure in the peripheral interconnectionlayer is electrically connected to the peripheral circuit; and disposingthe array interconnection layer and the peripheral interconnectionlayer, such that the at least one first interconnection structurecorresponds to the at least one second interconnection structurerespectively.

The method can further include: prior to forming the slits, forming aplurality of doped regions in the first substrate, so as to contact eachslit structure with a corresponding doped region.

The method can further include forming the plurality of slit structureslaterally to extend along a word line direction to divide thealternating conductor/dielectric stack into a plurality of memoryfingers.

The method can further include forming two parallel barrier structureslaterally to extend along the word line direction, such that the firstregion is separated by the two parallel barrier structure from thesecond region and sandwiched between two neighboring slit structures.

The method can further include forming the barrier structure laterallyextending along a bit line direction that is different than the wordline direction to laterally separate the first region from the secondregion.

The method can further include forming the barrier structure tolaterally extend along the bit line direction that is perpendicular tothe word line direction.

The method can further include forming the barrier structure such that awidth in the bit line direction of the first region enclosed by thebarrier structure is larger than a distance between two neighboring slitstructures.

The method can further include forming a staircase structure in thealternating dielectric stack adjacent to the barrier structure.

The method can further include forming at least one conductive layer onthe staircase structure adjacent to the barrier structure tointerconnect top select gates that are above the alternatingconductor/dielectric stack in the second region, and on both sides offirst region enclosed by the barrier structure in the word linedirection.

The method can further include forming at least two barrier structuresto enclose at least two first regions extending parallel along the bitline direction.

The method can further include forming a plurality of barrier structuresto enclose a plurality of first regions from the second region, theplurality of first regions are aligned in the bit line direction, suchthat each of the plurality of first regions is sandwiched between twoneighboring slit structures in the bit line direction.

The method can further include forming the plurality of barrierstructures such that the plurality of first regions enclosed by theplurality of barrier structures are aligned as at least two columns inthe bit line direction.

The method can further include forming a gap in the at least one siltstructure that is sandwiched by two neighboring barrier structures inthe bit line direction to for interconnect word lines of neighboringmemory fingers.

The method can further include forming the barrier structure to separatethe first region in the staircase structure at the edge of thealternating stack. An opening of the barrier structure can be at theedge of the alternating layer stack along a bit line direction that isdifferent than the word line direction.

The method can further include forming the barrier structure, such thata width of the first region in the bit line direction is larger than adistance between two neighboring slit structures.

The method can further include forming the barrier structure, such thata width of the first region in the bit line direction is less than amaximum distance between two neighboring slit structures in thestaircase structure.

The method can further include forming a plurality of dummy channelstructures adjacent to the barrier structure, each dummy channelstructure extending vertically through the alternatingconductor/dielectric stack.

The foregoing description of the specific embodiments will so fullyreveal the general nature of the present disclosure that others can, byapplying knowledge within the skill of the art, readily modify and/oradapt for various applications such specific embodiments, without undueexperimentation, without departing from the general concept of thepresent disclosure. Therefore, such adaptations and modifications areintended to be within the meaning and range of equivalents of thedisclosed embodiments, based on the teaching and guidance presentedherein. It is to be understood that the phraseology or terminologyherein is for the purpose of description and not of limitation, suchthat the terminology or phraseology of the present specification is tobe interpreted by the skilled artisan in light of the teachings andguidance.

Embodiments of the present disclosure have been described above with theaid of functional building blocks illustrating the implementation ofspecified functions and relationships thereof. The boundaries of thesefunctional building blocks have been arbitrarily defined herein for theconvenience of the description. Alternate boundaries can be defined solong as the specified functions and relationships thereof areappropriately performed.

The Summary and Abstract sections may set forth one or more but not allexemplary embodiments of the present disclosure as contemplated by theinventor(s), and thus, are not intended to limit the present disclosureand the appended claims in any way.

The breadth and scope of the present disclosure should not be limited byany of the above-described exemplary embodiments, but should be definedonly in accordance with the following claims and their equivalents.

What is claimed is:
 1. A three-dimensional (3D) NAND memory device,comprising: a stack on a substrate, the stack comprising: a first regionincluding a first stack comprising first and second dielectric layersarranged alternately in a vertical direction; and a second regionincluding a second stack comprising conductor layers and thirddielectric layers arranged alternately in the vertical direction; abarrier structure comprising two barrier walls, wherein: the two barrierwalls extend vertically through the stack; the two barrier walls extendlaterally along a word line direction to laterally separate the firstand second regions; and an opening of the barrier structure is at anedge of the first stack along a bit line direction; and a plurality ofthrough array contacts in the first region, each through array contactextending vertically through the first stack.
 2. The memory device ofclaim 1, wherein at least one of the plurality of through array contactsis connected with at least one peripheral circuit.
 3. The memory deviceof claim 1, wherein: each of the first dielectric layers comprisessilicon oxide; each of the second dielectric layers comprises siliconnitride; each of the third dielectric layers comprises silicon oxide;and each of the conductor layers comprises a metal.
 4. The memory deviceof claim 1, wherein: a first quantity of the first dielectric layers isat least 32; a second quantity of the second dielectric layers is atleast 32; a third quantity of the third dielectric layers is at least32; and a fourth quantity of the conductor layers is at least
 32. 5. Thememory device of claim 1, wherein: the barrier structure extendslaterally along the bit line direction to laterally separate the firstand second regions; and the bit line direction is different from theword line direction.
 6. The memory device of claim 5, wherein the bitline direction is perpendicular to the word line direction.
 7. Thememory device of claim 5, wherein the barrier structure separates thefirst region and a staircase structure, wherein the staircase structureis on an edge of the second stack along the word line direction.
 8. Thememory device of claim 6, wherein the barrier structure separates thefirst region and a staircase structure, wherein the staircase structureis on an edge of the second stack along the word line direction.
 9. Thememory device of claim 1, further comprising a plurality of slitstructures each extending vertically through the second stack andlaterally along the word line direction to divide the second stack intoa plurality of memory fingers.
 10. The memory device of claim 9, whereina width of the first region along the bit line direction is no greaterthan a width of each of the plurality of memory fingers along the bitline direction.
 11. A method for forming a three-dimensional (3D) NANDmemory device, comprising: forming a stack on a substrate, comprising:forming a first stack in a first region of the stack, wherein the firststack comprises first and second dielectric layers arranged alternatelyin a vertical direction; and forming a second stack in a second regionof the stack, wherein the second stack comprises conductor layers andthird dielectric layers arranged alternately in the vertical direction;forming a barrier structure laterally separating the first and secondregions, comprising: forming two barrier walls extending verticallythrough the stack and extending laterally along a word line direction;and forming an opening of the barrier structure at an edge of the firststack along a bit line direction; and forming, in the first region, aplurality of through array contacts extending vertically through thefirst stack.
 12. The method of claim 11, wherein forming the pluralityof through array contacts comprises connecting at least one of theplurality of through array contacts with at least one peripheralcircuit.
 13. The method of claim 11, wherein: forming the first stackcomprises: forming the first dielectric layers comprising silicon oxide;and forming the second dielectric layers comprising silicon nitride; andforming the second stack comprises: forming the third dielectric layerscomprising silicon oxide; and forming the conductor layers comprising ametal.
 14. The method of claim 11, wherein: forming the second stackcomprises forming at least 32 conductor layers and at least 32 thirddielectric layers; and forming the first stack comprises forming atleast 32 first dielectric layers and at least 32 second dielectriclayers.
 15. The method of claim 11, wherein forming the barrierstructure further comprises forming the barrier structure extendinglaterally along the bit line direction to laterally separate the firstand second regions.
 16. The method of claim 11, wherein the bit linedirection is perpendicular to the word line direction.
 17. The method ofclaim 15, wherein forming the barrier structure further comprisesforming the barrier structure to separate the first region and astaircase structure, wherein the staircase structure is at an edge ofthe second stack along the word line direction.
 18. The method of claim16, wherein forming the barrier structure further comprises forming thebarrier structure to separate the first region and a staircasestructure, wherein the staircase structure is at an edge of the secondstack along the word line direction.
 19. The method of claim 11, furthercomprising forming a plurality of slit structures each extendingvertically through the second stack and laterally along the word linedirection to divide the second stack into a plurality of memory fingers.20. The method of claim 19, wherein a width of the first region alongthe bit line direction is no greater than a width of each of theplurality of memory fingers along the bit line direction.